Display device including a thin film encapsulation layer and a method of manufacturing the same

ABSTRACT

A display device includes: a plurality of light emitting diodes emitting a light; a capping layer disposed on the plurality of light emitting diodes and including an organic material; and a plurality of metal patterns disposed on the capping layer and overlapping the plurality of light emitting diodes.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2021-0011479 filed on Jan. 27, 2021 in the KoreanIntellectual Property Office (KIPO), the disclosure of which isincorporated by reference herein in its entirety.

TECHNICAL FIELD

Embodiments of the present inventive concept relate to a display device.More particularly, embodiments of the present inventive concept relateto a display device including a thin film encapsulation layer and amethod of manufacturing the display device.

DISCUSSION OF THE RELATED ART

Display devices are manufactured in various ways, and various types ofdisplay devices may be manufactured and used. For example, types ofdisplay devices that may be manufactured include an organic lightemitting display device, a liquid crystal display device, or the like.

The display device may display an image on a screen and provide it to auser. In this case, as external light incident on the display device isreflected from the surface of the display device, the display quality ofthe display device may deteriorate. To prevent this, display devicestypically include a polarizing film, a color filter, and the like may beused. In addition to this, display devices are under development tosuppress reflection of external light.

SUMMARY

According to an embodiment of the present inventive concept, a displaydevice, includes: a plurality of light emitting diodes emitting a light;a capping layer disposed on the plurality of light emitting diodes andincluding an organic material; and a plurality of metal patternsdisposed on the capping layer and overlapping the plurality of lightemitting diodes.

In an embodiment of the present inventive concept, the plurality ofmetal patterns include at least one of aluminum, silver, magnesium,chromium, titanium, nickel, silver, tantalum, copper, calcium, cobalt,iron, molybdenum, tungsten, platinum, ytterbium, or bismuth.

In an embodiment of the present inventive concept, the plurality ofmetal patterns include at least one of silicon oxide, titanium oxide,zirconium oxide, tantalum oxide, hafnium oxide, aluminum oxide, zincoxide, yttrium oxide, beryllium oxide, magnesium oxide, lead oxide,tungsten oxide, silicon nitride, lithium fluoride, calcium fluoride,magnesium fluoride or cadmium sulfide.

In an embodiment of the present inventive concept, the plurality oflight emitting diodes include: a first light emitting diode emittinglight of a first color; a second light emitting diode emitting light ofa second color; and a third light emitting diode emitting light of athird color.

In an embodiment of the present inventive concept, the plurality ofmetal patterns are arranged along a first direction and are spaced apartfrom each other in the first direction.

In an embodiment of the present inventive concept, the plurality ofmetal patterns are arranged to overlap the first, second and third lightemitting diodes.

In an embodiment of the present inventive concept, a distance at whichthe plurality of metal patterns are separated from each other is about 1micrometer or less.

In an embodiment of the present inventive concept, each of the pluralityof metal patterns has a same width in the first direction as each other,and the width is about 1 micrometer or less.

In an embodiment of the present inventive concept, among the pluralityof metal patterns, a first plurality of metal patterns overlap the firstlight emitting diode, and each of the first plurality of metal patternshas a first width in the first direction. Among the plurality of metalpatterns, a second plurality of metal patterns overlap the second lightemitting diode, and each of the second plurality of metal patterns has asecond width in the first direction. Among the plurality of metalpatterns, a third plurality of metal patterns overlap the third lightemitting diode, and each of the third plurality of metal patterns has athird width in the first direction. Each of the first, second and thirdwidths is about 1 micrometer or less.

In an embodiment of the present inventive concept, a shortest distancebetween the plurality of metal patterns and the plurality of lightemitting diodes is about 1 micrometer or less.

In an embodiment of the present inventive concept, the display devicefurther includes: a thin film encapsulation layer disposed on theplurality of metal patterns, and wherein the thin film encapsulationlayer includes: a first inorganic encapsulation layer disposed on theplurality of metal patterns; an organic encapsulation layer disposed onthe first inorganic encapsulation layer; and a second inorganicencapsulation layer disposed on the organic layer.

In an embodiment of the present inventive concept, the display devicefurther includes: a transistor substrate including a plurality oftransistors, and electrically connected to the plurality of lightemitting diodes disposed on the transistor substrate, and wherein eachof the plurality of light emitting diodes includes: an anode electrodedisposed on the transistor substrate; a light emitting layer disposed onthe anode electrode; and a cathode electrode disposed on the lightemitting layer.

In an embodiment of the present inventive concept, each of the pluralityof metal patterns includes an upper surface and a lower surface, whereinan external light incident on the plurality of metal patterns isreflected as a first reflected light from the upper surface, wherein theexternal light is reflected as a second reflected light from the lowersurface, and wherein the first reflected light and the second reflectedlight interfere with each other.

In an embodiment of the present inventive concept, the capping layerincludes an acrylic organic material.

According to an embodiment of the present inventive concept, a method ofmanufacturing a display device includes: forming a pixel including atransistor and a light emitting diode disposed on the transistor andconnected to the transistor; forming a capping layer on the lightemitting diode, wherein the capping layer includes an organic material;forming a metal layer on the capping layer; patterning the metal layerto form a plurality of metal patterns; and forming a thin filmencapsulation layer on the plurality of metal patterns.

In an embodiment of the present inventive concept, the plurality ofmetal patterns include at least one of aluminum, silver, magnesium,chromium, titanium, nickel, silver, tantalum, copper, calcium, cobalt,iron, molybdenum, tungsten, platinum, ytterbium, or bismuth.

In an embodiment of the present inventive concept, the plurality ofmetal patterns include at least one of silicon oxide, titanium oxide,zirconium oxide, tantalum oxide, hafnium oxide, aluminum oxide, zincoxide, yttrium oxide, beryllium oxide, magnesium oxide, lead oxide,tungsten oxide, silicon nitride, lithium fluoride, calcium fluoride,magnesium fluoride or cadmium sulfide.

In an embodiment of the present inventive concept, the plurality ofmetal patterns are arranged along a first direction and are spaced apartfrom each other in the first direction.

In an embodiment of the present inventive concept, a distance at whichthe plurality of metal patterns are separated from each other is about 1micrometer or less, wherein each of the plurality of metal patterns hasa same width in the first direction as each other, and wherein the widthis about 1 micrometer or less.

In an embodiment of the present inventive concept, each of the pluralityof metal patterns includes an upper surface and a lower surface, whereinan external light incident on the plurality of metal patterns isreflected as a first reflected light from the upper surface, wherein theexternal light is reflected as a second reflected light from the lowersurface, and wherein the first reflected light and the second reflectedlight interfere with each other.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the present inventive concept willbecome more apparent by describing in detail embodiments thereof, withreference to the accompanying drawings, in which:

FIG. 1 is a block diagram illustrating a display device according to anembodiment of the present inventive concept.

FIG. 2 is a cross-sectional view schematically illustrating anembodiment of a cross-section taken along the line I-I′ of FIG. 1.

FIG. 3 is a plan view illustrating an embodiment of the metal layer ofFIG. 2.

FIGS. 4A and 4B are cross-sectional views schematically illustrating anembodiment of a cross-section taken along line I-I′ of FIG. 1.

FIG. 5A is a plan view illustrating an embodiment of the metal layer ofFIG. 4A.

FIG. 5B is a plan view illustrating an embodiment of the metal layer ofFIG. 4B.

FIG. 6 is a cross-sectional view illustrating an embodiment of across-section taken along the line I-I′ of FIG. 1.

FIGS. 7A, 7B and 7C are diagrams illustrating a method of manufacturingthe display device of FIG. 1 according to an embodiment of the presentinventive concept.

FIG. 8 is a block diagram illustrating an electronic device according toan embodiment of the present inventive concept.

FIG. 9 is a diagram illustrating an embodiment in which the electronicdevice of FIG. 8 is implemented as a television.

FIG. 10 is a diagram illustrating an embodiment in which the electronicdevice of FIG. 8 is implemented as a smart phone.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, display devices in accordance with embodiments of thepresent inventive concept will be explained in detail with reference tothe accompanying drawings.

FIG. 1 is a block diagram illustrating a display device according to anembodiment of the present inventive concept.

Referring to FIG. 1, the display device may include a display panel DPincluding a plurality of pixels P, a data driver DDV, a gate driver GDV,and a timing controller CON.

The display device may display an image through the display panel DP. Tothis end, the display panel DP may include a plurality of pixels P andlight emitting elements connected to the pixels. In an embodiment of thepresent inventive concept, the display panel DP may be configured as asingle panel. In addition, in an embodiment of the present inventiveconcept, the display panel DP may include a plurality of panels.

The timing controller CON may generate a gate control signal GCTRL, adata control signal DCTRL, and an output image data ODAT based on acontrol signal CTRL and an input image data IDAT provided from theoutside (e.g., an external device). For example, the control signal CTRLmay include a vertical synchronization signal, a horizontalsynchronization signal, an input data enable signal, a master clocksignal, and the like. For example, the input image data IDAT may be RGBdata including red image data, green image data, and blue image data. Inaddition, the input image data IDAT may include magenta image data, cyanimage data, and yellow image data.

The gate driver GDV may generate gate signals based on the gate controlsignal GCTRL provided from the timing controller CON. For example, thegate control signal GCTRL may include a vertical start signal, a clocksignal, and the like. In an embodiment of the present inventive concept,the gate driver GDV may be manufactured as a separate panel andconnected to the display panel DP. The gate driver GDV is electricallyconnected to the display panel DP and may sequentially output the gatesignals. Each of the pixels may receive a data voltage according to thecontrol of each of the gate signals.

The data driver DDV may generate the data voltage based on the datacontrol signal DCTRL and the output image data ODAT provided from thetiming controller CON. For example, the data control signal DCTRL mayinclude an output data enable signal, a horizontal start signal, and aload signal. In an embodiment of the present inventive concept, the datadriver DDV may be manufactured as a separate panel and electricallyconnected to the display panel DP. The data driver DDV is electricallyconnected to the display panel DP and may generate a plurality of datavoltages. Each of the pixels P may receive a signal for luminancecorresponding to each of the data voltages so that the light emittingelement of each of the pixels P may emit light corresponding to the datavoltages.

FIG. 2 is a cross-sectional view schematically illustrating anembodiment of a cross-section taken along the line I-I′ of FIG. 1. FIG.3 is a plan view illustrating an embodiment of the metal layer of FIG.2.

Referring to FIGS. 1 to 3, the display device may include a transistorsubstrate TS, light emitting diodes ED1, ED2, ED3, a pixel defininglayer PDL, a capping layer CPL, a first metal layer LRL1, a thin filmencapsulation layer TFE, an insulating layer IL, and an organic materiallayer RCL.

The transistor substrate TS may include a plurality of transistors. Thetransistors may transmit signals to the light emitting diodes ED1, ED2,ED3. The light emitting diodes ED1, ED2, ED3 may emit light based on thereceived signals. To this end, the light emitting diodes ED1, ED2, ED3may be electrically connected to the plurality of transistors. In anembodiment of the present inventive concept, each of the light emittingdiodes ED1, ED2, ED3 may be an organic light emitting diode.

In an embodiment of the present inventive concept, a first lightemitting diode ED1 may emit light of a first color. A second lightemitting diode ED2 may emit light of a second color, and a third lightemitting diode ED3 may emit colored light. For example, the first colormay be red light, and the second color may be green light. As anadditional example, the third color may be blue light. However, this ismerely an example, and the colors of light emitted by the light emittingdiodes ED1, ED2, ED3 are not limited thereto. The light emitting diodesED1, ED2, ED3 may be defined by the pixel defining layer PDL. Forexample, the light emitting diodes ED1, ED2 and ED3 may be surrounded bythe pixel defining layer PDL.

The capping layer CPL may be disposed on the light emitting diodes ED1,ED2, ED3 and the pixel defining layer PDL. The capping layer CPL mayinclude an insulating material. In an exemplary embodiment of thepresent inventive concept, the capping layer CPL may include an organicinsulating material. For example, the organic insulating material mayinclude an epoxy resin, an acrylic resin, a phenol resin, a melamineresin, a cardo resin, an imide resin, and the like. For example, theorganic insulating material may include an acrylic organic material. Inan embodiment of the present inventive concept, the capping layer CPLmay be disposed to extend in a first direction DR1. In addition, thecapping layer CPL may have a thickness in a second directionsubstantially perpendicular to the first direction DR1. The thicknessmay be about 1 micrometer or less. For example, the shortest distancebetween the first metal layer LRL1 and the light emitting diodes ED1,ED2, ED3 may be about 1 micrometer or less. For example, the thicknessmay be about 10 to 200 nanometers. When the thickness of the cappinglayer CPL exceeds 1 micrometer, the first metal layer LRL1 might notefficiently transmit light emitted from the light emitting diodes ED1.ED2, ED3.

The first metal layer LRL1 may be disposed on the capping layer CPL. Thefirst metal layer LRL1 may include an upper surface US and a lowersurface LS. External light incident on the display device may bereflected from the upper surface US and the lower surface LS. In thiscase, a phase difference may occur between a first reflected light L1reflected from the upper surface US and a second reflected light L2reflected from the lower surface LS. Accordingly, the first reflectedlight L1 and the second reflected light L2 may cause destructiveinterference with each other. Accordingly, the display device mayprevent deterioration of display quality caused by reflection of theexternal light.

In addition, according to an embodiment of the present inventiveconcept, since the first metal layer LRL1 suppresses reflection ofexternal light, a separate polarizing film might not be needed.Accordingly, it is possible to reduce the thickness of the displaydevice and increase the flexibility of the display device.

The thin film encapsulation layer TFE may be disposed on the first metallayer LRL1. The thin film encapsulation layer TFE may prevent externalforeign substances from penetrating into the light emitting diodes ED),ED2, ED3. In addition, the thin film encapsulation layer TFE may protectthe light emitting diodes ED1, ED2, ED3 from external impact.

The insulating layer IL may be disposed on the thin film encapsulationlayer TFE. The insulating layer IL may include an insulating material.For example, the insulating layer may include an inorganic insulatingmaterial or an organic insulating material. The inorganic insulatingmaterial may include, for example, silicon oxide, silicon nitride,silicon oxynitride, tantalum oxide, and the like. The organic insulatingmaterial may include, for example, photoresist, polyacrylic resin,polyimide resin, acrylic resin, and the like. The insulating layer IL isillustrated as a single layer, but may include a plurality of insulatinglayers. In this case, conductive layers may be disposed between theinsulating layers, and the insulating layers may include inorganicinsulating layers and/or organic insulating layers.

An organic material layer RCL may be disposed on the insulating layerIL. The organic material layer RCL may include an organic material. Forexample, the organic material may include a heat curable resin, a UVcurable resin, and the like. The organic material layer RCL may furtherinclude, for example, a pigment, a dye, or the like. Through this, theorganic material layer RCL may absorb light of a specific wavelength toincrease display quality of the display device. For example, the organicmaterial layer RCL may absorb external light reflected from the bottomof the display device. In addition, the organic material layer RCL mayabsorb light in a wavelength band other than light emitted to theoutside among light emitted from the bottom of the display device. Theorganic material layer RCL may have a flat top surface. To this end, theorganic material layer RCL may undergo a planarization process.

FIGS. 4A and 4B are cross-sectional views schematically illustrating anembodiment of a cross-section taken along line I-I′ of FIG. 1. FIGS. 4Aand 4B may be substantially the same as that of FIG. 3 except that asecond metal layer LRL2 is patterned. Accordingly, a description ofoverlapping elements and configurations will be omitted.

Referring to FIGS. 1 and 4A, the second metal layer LRL2 may include aplurality of metal patterns. The metal patterns may be disposed to bespaced apart from each other in the first direction DR1. The distancebetween the metal patterns may be about 1 micrometer or less. Inaddition, the metal patterns may have the same width in the firstdirection DR1 as each other. The metal patterns may be disposed tooverlap the light emitting diodes ED1, ED2, ED3 and to not overlap thepixel defining layer PDL. For example, the shortest distance between thesecond metal layer LRL2 and the light emitting diodes ED1, ED2, ED3 maybe about 1 micrometer or less. Accordingly, the metal patterns mayselectively transmit light emitted from the light emitting diodes ED1,ED2, ED3 to increase display quality of the display device. Accordingly,in the present inventive concept, a separate color filter or the likemay not be needed.

In an embodiment of the present inventive concept, a degree oftransmission of light emitted from the light emitting diodes ED1, ED2,ED3 may vary according to the width of the metal patterns. For example,the light of a color that has the greatest influence on the displayquality of the display device may be green light. Accordingly, the metalpatterns may be patterned to have a width for best transmitting thegreen light.

In addition, as illustrated in FIG. 4B, at least one of the metalpatterns of the second metal layer LRL2 may have a different width inthe first direction DR1 than the remaining metal patterns. For example,the metal patterns overlapping the first light emitting diode ED1 mayhave a first width, and accordingly, gaps with a first predetermineddistance may be formed between the metal patterns overlapping the firstlight emitting diode ED1. The metal patterns overlapping the secondlight emitting diode ED2 may have a second width, and accordingly, gapswith a second predetermined distance may be formed between the metalpatterns overlapping the second light emitting diode ED2. The metalpatterns overlapping the third light emitting diode ED3 may have a thirdwidth, and accordingly, gaps with a third predetermined distance may beformed between the metal patterns overlapping the third light emittingdiode ED3. The first, second and third widths may be different from eachother, and the first, second and third predetermined distances may bedifferent from each other. Accordingly, the metal patterns selectivelytransmit wavelengths of light emitted by the light emitting diodes ED1,ED2, ED3, respectively, thereby increasing display quality of thedisplay device.

The metal patterns overlapping the first light emitting diode ED1 mayinclude the first width and gaps therebetween for selectivelytransmitting light emitted from the first light emitting diode ED1. Themetal patterns overlapping the second light emitting diode ED2 mayinclude the second width and gaps therebetween for selectivelytransmitting light emitted from the second light emitting diode ED2. Themetal patterns overlapping the third light emitting diode ED3 mayinclude the third width and gaps therebetween for selectivelytransmitting light emitted from the third light emitting diode ED3.

As such, the second metal layer LRL2 selectively transmits light emittedfrom the light emitting diodes ED1, ED2, ED3, thereby increasing lightefficiency of the display device.

FIG. 5A is a plan view illustrating an embodiment of the metal layer ofFIG. 4A, and FIG. 5B is a plan view illustrating an embodiment of themetal layer of FIG. 4B.

Referring to FIGS. 4A and 5A, each of the metal patterns may be disposedto be spaced apart from each other by a predetermined distance W in thefirst direction DR1. In addition, each of the metal patterns may have aconstant width P in the first direction DR1.

Referring to FIGS. 4B and 5B, the metal patterns in the first lightemitting area LA1 may be disposed to be spaced apart from each other bya first distance W1. In addition, the metal patterns may have a firstwidth P1 in the first light emitting area LA1. The metal patterns in thesecond light emitting area LA2 may be disposed to be spaced apart fromeach other by a second distance W2. In addition, the metal patterns mayhave a second width P2 in the second light emitting area LA2. The metalpatterns in the third light emitting area LA3 may be disposed to bespaced apart from each other by a third distance W3. In addition, themetal patterns may have a third width P3 in the third light emittingarea LA3.

In an embodiment of the present inventive concept, the distances W1, W2,W3 may be different from each other. In addition, the widths P1, P2, P3may be different from each other.

FIG. 6 is a cross-sectional view illustrating an embodiment of across-section taken along the line I-I′ of FIG. 1.

Referring to FIGS. 1 and 6, the display device may include a substrateSUB, a buffer layer BUF, a gate insulating layer GI, an interlayerinsulating layer ILD, a via insulating layer VIA, a transistor TFT, apixel defining layer PDL, and an organic light emitting diode OLED, acapping layer CPL, a second metal layer LRL2, and a thin filmencapsulation layer TFE.

The transistor TFT may include an active layer ACT, a gate electrodeGAT, a source electrode SE, and a drain electrode DE. The organic lightemitting diode OLED may include an anode electrode AND, a light emittinglayer EL, and a cathode electrode CATH. The thin film encapsulationlayer TFE may include a first inorganic encapsulation layer IL1, anorganic encapsulation layer OL, and a second inorganic encapsulationlayer IL2.

The substrate SUB may include a plurality of layers. For example, thesubstrate SUB may have a structure in which a first base substrate BS1,a first barrier layer BAR1, a second base substrate BS2, and a secondbarrier layer BAR2 are stacked.

In an embodiment of the present inventive concept, the first basesubstrate BS1 may have rigid characteristics. In this case, the firstbase substrate BS1 may include, for example, glass, quartz, or the like.In addition, in an embodiment of the present inventive concept, thefirst base substrate BS1 may have a flexible characteristic. In thiscase, the first base substrate BS1 may include, for example, plastic orthe like. For example, the first base substrate BS1 may includepolyimide.

The first barrier layer BAR1 may be disposed on the first base substrateSUB1. The first barrier layer BAR1 may include an organic materialand/or an inorganic material. In an embodiment of the present inventiveconcept, the first barrier layer BAR1 may include, for example, siliconoxide (“SiOx”), silicon nitride (“SiNx”), silicon oxynitride (“SiOxNy”),or the like. The first barrier layer BAR1 may prevent diffusion ofimpurities from the first base substrate SUB1 to the transistor TFT. Inaddition, the first barrier layer BAR1 may protect the transistor TFTfrom external impact.

The second base substrate BS2 may be disposed on the first barrier layerBAR). The second base substrate BS2 may include substantially the samematerial as the first base substrate BS1.

The second barrier layer BAR2 may be disposed on the second basesubstrate BS2. The second barrier layer BAR2 may include substantiallythe same material as the first barrier layer BAR1.

The buffer layer BUF may be disposed on the second barrier layer BAR2.For example, the buffer layer BUF may include silicon oxide (“SiOx”),silicon nitride (“SiNx”), silicon oxynitride (“SiOxNy”), or the like.The buffer layer BUF may prevent metal atoms or impurities fromdiffusing into the active layer ACT. In addition, the buffer layer BUFmay control the transmission of heat provided to the active layer ACTduring a crystallization process for forming the active layer ACT.

The active layer ACT may be disposed on the buffer layer BUF. In anembodiment of the present inventive concept, the active layer ACT mayinclude a silicon semiconductor. For example, the active layer ACT mayinclude amorphous silicon, polycrystalline silicon, or the like. Inaddition, in an embodiment of the present inventive concept, the activelayer ACT may include an oxide semiconductor. For example, the activelayer ACT may include indium-gallium-zinc oxide (“IGZO”), indium-galliumoxide (“IGO”), and indium-zinc oxide (“IZO”).

The gate insulating layer GI may be disposed on the buffer layer BUF.The gate insulating layer GI may be disposed to cover the active layerACT. The gate insulating layer GI may include an insulating material.For example, the gate insulating layer GI may include silicon oxide(“SiOx”), silicon nitride (“SiNx”), silicon oxynitride (“SiOxNy”), orthe like.

The gate electrode GAT may be disposed on the gate insulating layer GI.The gate electrode GAT may overlap the active layer ACT. In response toa gate signal provided to the gate electrode GAT, a signal and/or avoltage may flow through the active layer ACT. In an embodiment of thepresent inventive concept, the gate electrode GAT may include a metal,an alloy, a metal oxide, a transparent conductive material, or the like.For example, the gate electrode GAT may include silver (“Ag”), an alloycontaining silver, molybdenum (“Mo”), an alloy containing molybdenum,aluminum (“Al”), an alloy containing aluminum, and aluminum nitride(“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel(“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”),tantalum (“Ta”), platinum (“Pt”), Scandium (“Sc”), indium tin oxide(“ITO”), indium zinc oxide (“IZO”), and the like.

The interlayer insulating layer ILD may be disposed on the gateinsulating layer GI. The interlayer insulating layer ILD may be disposedto cover the gate electrode GAT. In an embodiment of the presentinventive concept, the interlayer insulating layer ILD may include aninsulating material. For example, the interlayer insulating layer ILDmay include silicon oxide (“SiOx”), silicon nitride (“SiNx”), siliconoxynitride (“SiOxNy”), or the like.

The source electrode SE and the drain electrode DE may be disposed onthe interlayer insulating layer ILD. The source electrode SE and thedrain electrode DE may contact the active layer ACT. In an embodiment ofthe present inventive concept, the source electrode SE and the drainelectrode DE may include a metal, an alloy, a metal oxide, a transparentconductive material, and the like. For example, the source electrode SEand the drain electrode DE may include silver (“Ag”), an alloycontaining silver, molybdenum (“Mo”), an alloy containing molybdenum,aluminum (“Al”), an alloy containing aluminum, and aluminum nitride(“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel(“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”),tantalum (“Ta”), platinum (“Pt”), Scandium (“Sc”), indium tin oxide(“ITO”), indium zinc oxide (“IZO”), and the like.

The via insulating layer VIA may be disposed on the interlayerinsulating layer ILD. The via insulating layer VIA may be disposed tocover the source electrode SE and the drain electrode DE. In anembodiment of the present inventive concept, the via insulating layerVIA may include an organic insulating material. Accordingly, the viainsulating layer VIA may have a substantially flat top surface. Forexample, the via insulating layer VIA may include a photoresist, apolyacrylic resin, a polyimide resin, an acrylic resin, or the like.

The first base substrate BS1 to the via insulating layer VIA mayconstitute the transistor substrate TS.

The anode electrode AND may be disposed on the via insulating layer VIA.The anode electrode AND may contact the drain electrode DE through a viapenetrating the via insulating layer VIA. In an embodiment of thepresent inventive concept, the anode electrode AND may include a metal,an alloy, a metal oxide, a transparent conductive material, or the like.For example, the anode electrode AND may include silver (“Ag”), an alloycontaining silver, molybdenum (“Mo”), an alloy containing molybdenum,aluminum (“Al”), an alloy containing aluminum, and aluminum nitride(“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel(“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”),tantalum (“Ta”), platinum (“Pt”), Scandium (“Sc”), indium tin oxide(“ITO”), indium zinc oxide (“IZO”), and the like.

The pixel defining layer PDL may be disposed on the via insulating layerVIA. An opening exposing the anode electrode AND may be formed in thepixel defining layer PDL. In an embodiment of the present inventiveconcept, the pixel defining layer PDL may include an organic material.For example, the pixel defining layer PDL may include a photoresist, apolyacrylic resin, a polyimide resin, an acrylic resin, or the like.

The light emitting layer EL may be disposed on the anode electrode AND.The light emitting layer EL may include an organic material emittinglight of a predetermined color. The light emitting layer EL may emit thelight based on a potential difference between the anode electrode ANDthe cathode electrode CATH.

In addition, the light emitting layer EL may include at least one of ahole injection layer, a hole transport layer, an electron transportlayer, and an electron injection layer.

The cathode electrode CATH may be disposed on the light emitting layerEL. The cathode electrode CATH may include, for example, a metal, analloy, a metal oxide, a transparent conductive material, or the like.For example, the cathode electrode CATH may include silver (“Ag”), analloy containing silver, molybdenum (“Mo”), an alloy containingmolybdenum, aluminum (“Al”), an alloy containing aluminum, and aluminumnitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”),nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium(“Ti”), tantalum (“Ta”), platinum (“Pt”), Scandium (“Sc”), indium tinoxide (“ITO”), indium zinc oxide (“IZO”), and the like.

The capping layer CPL may be disposed on the cathode electrode CATH. Thecapping layer CPL may include an organic layer and an inorganic layer.

The organic layer of the capping layer CPL may be disposed along theprofile of the cathode electrode CATH. Accordingly, the organic layermay increase light extraction efficiency of the light emitted from thelight emitting layer EL. The organic layer may include organic materialssuch as a-NPD, NPB, TPD, m-MTDATA, Alq3, and CuPc.

The inorganic layer may be disposed on the organic layer. The inorganiclayer may protect the organic layer from external impact. The inorganiclayer may include lithium fluoride (“LiF”).

The second metal layer LRL2 may be disposed on the capping layer CPL.External light may enter the display device. The external light may beextinguished in the second metal layer LRL2. In an embodiment of thepresent inventive concept, the second metal layer LRL2 may cancel theexternal light by using a phase difference of the external lightreflected from an upper surface and a lower surface of the second metallayer LRL2. For example, the external light may be divided into a firstlight reflected from an upper surface of the second metal layer LRL2 anda second light reflected from a lower surface of the second metal layerLRL2. Phases of the first light and the second light may be opposite toeach other. Accordingly, since the first light and the second lightcancel each other and disappear, the external light reflected from theoutside of the display device may not be visually recognized.Accordingly, the display quality of the display device may be increased.For example, since the external light is not reflected, the displaydevice may effectively display a black image.

In an embodiment of the present inventive concept, the second metallayer LRL2 may include, for example, ytterbium (Yb). In addition, in anembodiment of the present inventive concept, the second metal layer LRL2may include, for example, bismuth (Bi). In addition, the second metallayer LRL2 may include, for example, aluminum (“Al”), silver (“Ag”),magnesium (“Mg”), chromium (“Cr”), titanium (“Ti”), nickel (“Ni”), gold(“Au”), tantalum (“Ta”), Copper (“Cu”), calcium (“Ca”), cobalt (“Co”),iron (“Fe”), molybdenum (“Mo”), tungsten (“W”), platinum (“Pt”) and thelike. In addition, the second metal layer LRL2 may include, for example,silicon oxide, titanium oxide, zirconium oxide, tantalum oxide, hafniumoxide, aluminum oxide, zinc oxide, yttrium oxide, beryllium oxide,magnesium oxide, lead oxide, tungsten oxide, silicon nitride, lithiumfluoride, calcium fluoride, magnesium fluoride, and the like.

Since the capping layer CPL is disposed between the second metal layerLRL2 and the cathode electrode CATH, the metal layer LRL2 and thecathode electrode CATH use an etalon effect to amplify a light having aspecific wavelength range. Accordingly, light efficiency of the displaydevice may be increased.

The second metal layer LRL2 is illustrated as being disposed to overlapthe opening formed in the pixel defining layer PDL, but the presentinventive concept is not limited thereto. For example, the second metallayer LRL2 may be entirely disposed on the capping layer CPL.

The thin film encapsulation layer TFE may be disposed on the secondmetal layer LRL2. The first inorganic encapsulation layer IL1 may bedisposed on the second metal layer LRL2 to cover the second metal layerLRL2. The first inorganic encapsulation layer IL1 may include, forexample, silicon oxide (“SiOx”), silicon nitride (“SiNx”), siliconoxynitride (“SiNxOy”), or the like. The organic encapsulation layer OLmay be disposed on the first inorganic encapsulation layer IL1. Theorganic encapsulation layer OL may have a flat top surface. For example,the organic encapsulation layer OL may be disposed to be relativelythicker than the first and second inorganic encapsulation layers IL1 andIL2; however, the present inventive concept is not limited thereto. Theorganic encapsulation layer OL may include, for example, a photoresist,a polyacrylic resin, a polyimide resin, an acrylic resin, and the like.The second inorganic encapsulation layer IL2 may be disposed on theorganic encapsulation layer OL. The second inorganic encapsulation layerIL2 may include, for example, silicon oxide (“SiOx”), silicon nitride(“SiNx”), silicon oxynitride (“SiNxOy”), or the like.

The first and second inorganic encapsulation layers IL1 and IL2 mayprevent oxygen and moisture from penetrating into the display device.Accordingly, the organic light emitting diode OLED may be protected. Inaddition, the first and second inorganic encapsulation layers IL1 andIL2 may protect the display device from external impact.

FIG. 7A to 7C are diagrams illustrating a method of manufacturing thedisplay device of FIG. 1 according to an embodiment of the presentinventive concept.

Referring to FIGS. 6 and 7A to 7C, a pixel including the transistor TFTand a light emitting diode may be formed on the substrate SUB. The lightemitting diode may be the organic light emitting diode OLED, and may beconnected to the transistor TFT.

The capping layer CPL may be formed on the organic light emitting diodeOLED. The capping layer CPL may be formed on the cathode electrode CATH.For example, the capping layer CPL may be formed to be entirely disposedon the cathode electrode CATH.

Thereafter, the second metal layer LRL2 may be formed on the cappinglayer CPL. The second metal layer LRL2 may be formed on the cappinglayer CPL and then patterned. For example, the second metal layer LRL2may be entirely formed on the capping layer CPL and then patterned.Accordingly, the second metal layer LRL2 may include a plurality ofmetal patterns spaced apart from each other in the first direction DR.As described above, the metal patterns may be spaced apart from eachother by the same and/or different distances, and may have the sameand/or different widths from each other. The second metal layer LRL2 maysuppress reflection of external light incident from an outside of thedisplay device and at the same time selectively transmits light emittedfrom a lower part to increase display quality of the display device.

The thin film encapsulation layer TFE may be disposed on the secondmetal layer LRL2 to protect the second metal layer LRL2. The thin filmencapsulation layer TFE may be disposed to cover the second metal layerLRL2.

FIG. 8 is a block diagram illustrating an electronic device according toan embodiment of the present inventive concept. FIG. 9 is a diagramillustrating an embodiment in which the electronic device of FIG. 8 isimplemented as a television, and FIG. 10 is a diagram illustrating anembodiment in which the electronic device of FIG. 8 is implemented as asmart phone.

Referring to FIGS. 8 to 10, an electronic device DD may include aprocessor 510, a memory device 520, a storage device 530, aninput/output device 540, a power supply 550, and a display device 560.In this case, the display device 560 may correspond to the displaydevice, according to an embodiment of the present inventive concept,described with reference to the aforementioned drawings. The electronicdevice DD may further include several ports capable of communicatingwith, for example, a video card, a sound card, a memory card, aUniversal Serial Bus (USB) device, and the like. In an embodiment of thepresent inventive concept, as illustrated in FIG. 9, the electronicdevice DD may be implemented as a television. In an embodiment of thepresent inventive concept, as illustrated in FIG. 10, the electronicdevice DD may be implemented as a smartphone. However, the electronicdevice DD is not limited thereto, and for example, the electronic deviceDD includes a mobile phone, a video phone, a smart pad, a smart watch, atablet personal computer (PC), a vehicle navigation system. In addition,the electronic device may be implemented as, for example, a computermonitor, notebook computer, head mounted display (HMD), or the like.

The processor 510 may perform specific calculations or tasks. In anembodiment of the present inventive concept, the processor 510 may be,for example, a micro processor, a central processing unit (CPU), anapplication processor (AP), or the like. The processor 510 may beconnected to other components through an address bus, a control bus, adata bus, or the like. In an embodiment of the present inventiveconcept, the processor 510 may also be connected to an expansion bussuch as a peripheral component interconnect (PCI) bus.

The memory device 520 may store data necessary for the operation of theelectronic device DD. For example, the memory device 520 may include anonvolatile memory device such as an erasable programmable read-onlymemory (EPROM) device, an electrically erasable programmable read-onlymemory (EEPROM) device, a flash memory device, and a phase change randomaccess memory (PRAM) device, a resistance random access memory (RRAM)device, a nano floating gate memory (NFGM) device, a polymer randomaccess memory (PoRAM) device, a magnetic random access memory (MRAM)device, a ferroelectric random access memory (FRAM) device, and/or avolatile memory device such as a dynamic random access memory (DRAM)device, a static random access memory (SRAM) device, a mobile DRAMdevice.

The storage device 530 may include a solid state drive (SSD), a harddisk drive (HDD), a CD-ROM, or the like. The input/output device 540 mayinclude an input means such as a keyboard, a keypad, a touch pad, atouch screen, and a mouse, and an output means such as a speaker and aprinter.

The display device according to an embodiment of the present inventiveconcept may be applied to a display device included in, for example, acomputer, a notebook, a mobile phone, a smart phone, a smart pad, aportable media player (PMP), a personal digital assistant (PDA), anMPEG-1 Audio Layer III (MP3) player, or the like.

While the present inventive concept has been described with reference toexemplary embodiments thereof, it will be understood by those ofordinary skill in the art that various changes in form and details maybe made thereto without departing from the spirit and scope of thepresent inventive concept.

What is claimed is:
 1. A display device, comprising: a plurality oflight emitting diodes emitting a light; a capping layer disposed on theplurality of light emitting diodes and including an organic material;and a plurality of metal patterns disposed on the capping layer andoverlapping the plurality of light emitting diodes.
 2. The displaydevice of claim 1, wherein the plurality of metal patterns include atleast one of aluminum, silver, magnesium, chromium, titanium, nickel,silver, tantalum, copper, calcium, cobalt, iron, molybdenum, tungsten,platinum, ytterbium, or bismuth.
 3. The display device of claim 1,wherein the plurality of metal patterns include at least one of siliconoxide, titanium oxide, zirconium oxide, tantalum oxide, hafnium oxide,aluminum oxide, zinc oxide, yttrium oxide, beryllium oxide, magnesiumoxide, lead oxide, tungsten oxide, silicon nitride, lithium fluoride,calcium fluoride, magnesium fluoride or cadmium sulfide.
 4. The displaydevice of claim 1, wherein the plurality of light emitting diodesinclude: a first light emitting diode emitting light of a first color; asecond light emitting diode emitting light of a second color; and athird light emitting diode emitting light of a third color.
 5. Thedisplay device of claim 4, wherein the plurality of metal patterns arearranged along a first direction and are spaced apart from each other inthe first direction.
 6. The display device of claim 5, wherein theplurality of metal patterns are arranged to overlap the first, secondand third light emitting diodes.
 7. The display device of claim 5,wherein a distance at which the plurality of metal patterns areseparated from each other is about 1 micrometer or less.
 8. The displaydevice of claim 7, wherein each of the plurality of metal patterns has asame width in the first direction as each other, and the width is about1 micrometer or less.
 9. The display device of claim 5, wherein amongthe plurality of metal patterns, a first plurality of metal patternsoverlap the first light emitting diode, and each of the first pluralityof metal patterns has a first width in the first direction, among theplurality of metal patterns, a second plurality of metal patternsoverlap the second light emitting diode, and each of the secondplurality of metal patterns has a second width in the first direction,among the plurality of metal patterns, a third plurality of metalpatterns overlap the third light emitting diode, and each of the thirdplurality of metal patterns has a third width in the first direction,and each of the first, second and third widths is about 1 micrometer orless.
 10. The display device of claim 1, wherein a shortest distancebetween the plurality of metal patterns and the plurality of lightemitting diodes is about 1 micrometer or less.
 11. The display device ofclaim 1, further comprising: a thin film encapsulation layer disposed onthe plurality of metal patterns, and wherein the thin film encapsulationlayer includes: a first inorganic encapsulation layer disposed on theplurality of metal patterns; an organic encapsulation layer disposed onthe first inorganic encapsulation layer; and a second inorganicencapsulation layer disposed on the organic layer.
 12. The displaydevice of claim 1, further comprising: a transistor substrate includinga plurality of transistors, and electrically connected to the pluralityof light emitting diodes disposed on the transistor substrate, andwherein each of the plurality of light emitting diodes includes: ananode electrode disposed on the transistor substrate; a light emittinglayer disposed on the anode electrode; and a cathode electrode disposedon the light emitting layer.
 13. The display device of claim 1, whereineach of the plurality of metal patterns includes an upper surface and alower surface, wherein an external light incident on the plurality ofmetal patterns is reflected as a first reflected light from the uppersurface, wherein the external light is reflected as a second reflectedlight from the lower surface, and wherein the first reflected light andthe second reflected light interfere with each other.
 14. The displaydevice of claim 1, wherein the capping layer includes an acrylic organicmaterial.
 15. A method of manufacturing a display device, comprising:forming a pixel including a transistor and a light emitting diodedisposed on the transistor and connected to the transistor; forming acapping layer on the light emitting diode, wherein the capping layerincludes an organic material; forming a metal layer on the cappinglayer; patterning the metal layer to form a plurality of metal patterns;and forming a thin film encapsulation layer on the plurality of metalpatterns.
 16. The method of claim 15, wherein the plurality of metalpatterns include at least one of aluminum, silver, magnesium, chromium,titanium, nickel, silver, tantalum, copper, calcium, cobalt, iron,molybdenum, tungsten, platinum, ytterbium, or bismuth.
 17. The method ofclaim 15, wherein the plurality of metal patterns include at least oneof silicon oxide, titanium oxide, zirconium oxide, tantalum oxide,hafnium oxide, aluminum oxide, zinc oxide, yttrium oxide, berylliumoxide, magnesium oxide, lead oxide, tungsten oxide, silicon nitride,lithium fluoride, calcium fluoride, magnesium fluoride or cadmiumsulfide.
 18. The method of claim 15, wherein the plurality of metalpatterns are arranged along a first direction and are spaced apart fromeach other in the first direction.
 19. The method of claim 18, wherein adistance at which the plurality of metal patterns are separated fromeach other is about 1 micrometer or less, wherein each of the pluralityof metal patterns has a same width in the first direction as each other,and wherein the width is about 1 micrometer or less.
 20. The method ofclaim 15, wherein each of the plurality of metal patterns includes anupper surface and a lower surface, wherein an external light incident onthe plurality of metal patterns is reflected as a first reflected lightfrom the upper surface, wherein the external light is reflected as asecond reflected light from the lower surface, and wherein the firstreflected light and the second reflected light interfere with eachother.